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Editorial: TDI Celebrates Ten Years of Pioneering GaN Technology
 
... When Vladimir Dmitriev started Technology & Device International Inc. (www.tdii.com) ten years ago, few were in the bulk GaN game with an eye toward producing viable, commercial product. With his seemingly unorthodox method of growing GaN and AlGaN single crystal material, some didn't take TDI all that seriously. Fortunately,...
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Fairchild Wins Product Accolades From EDN China

November 27, 2007...Fairchild Semiconductor of San Jose, California USA, reported that the company has received the EDN China Innovation Award 2007 for two of its products. The Chinese-language Economic Daily News gave Fairchild the awards for the FAN2106 TinyBuck DC-DC buck regulator and the FXL2TD245 in MicroPak dual-supply bi-directional translator. The FAN2106 TinyBuck DC-DC buck regulator was chosen in the competitive Analog & Mixed Signal ICs category, and the FXL2TD245 in MicroPak dual-supply bi-directional translator won in the Power Devices & Module category.

“We are very pleased that EDN China has selected these two devices for their ‘Leading Products Innovation Awards.’ This is the third consecutive year that Fairchild has been named a winner, and we’re extremely proud of our success. It shows the depth of knowledge and expertise at Fairchild and clearly highlights our ongoing drive to design products that meet the very specific needs of China’s electronics engineers,” said Rexin Wang, Fairchild’s vice president of Technical & Applications Support Centre, Asia Pacific. Company News Release

Andigics Selects Rochester to Distribute Discontinued Products
CompoundSemi News Staff

November 27, 2007...Anadigics of Warren, New Jersey USA, a supplier of wireless and broadband communication solutions, reported that it has selected Rochester Electronics to distribute its discontinued products. Anadigics said that Rochester will provide the same quality and standard to its customers, but will continue to fill orders when products reach end-of-life status and beyond. Anidigics also said that all of it products distributed by Rochester Electronics are 100% factory direct.

"Every product and technology has a life cycle," noted Jennifer Palella, Sr. Director of Worldwide Distribution for Anadigics, Inc. "Long program life cycles tend to have two schedules, one for the manufacturer and another for the customer. Partnering with Rochester will enhance our end-of-life strategy, allowing Anadigics to better serve its customers." Anadigics News Release

QenetiQ Ups GaN Epitaxy Capacity with Aixtron System

November 27, 2007...QenetiQ, has ordered a close coupled showerhead MOCVD system from Aixtron. The new system will come in the 6 x 2” flip top configuration. QinetiQ says the Aixtron system will be used to develop gallium nitride (GaN) devices for high performance applications. The system will be installed at QinetiQ’s Micro and Nano Technology laboratories in Malvern, UK. It will be added the company’s existing epitaxy systems, which include a CCS 3x2" reactor.

The new system will be supervised by Dr Trevor Martin who commented, “We have had a long and successful relationship with the Aixtron group, and this new larger scale reactor is the best tool for our new development plans for nitride-based devices. It will also serve us well for small-scale prototype runs of epiwafers for our international customers. We have great confidence that the new Aixtron reactor will give us excellent run-to-run, wafer-to-wafer reproducibility and uniformity with minimal downtime." Aixtron News Release

TDI Awarded Patent for HVPE Equipment that Makes Bulk GaN and AlGaN Substrates
CompoundSemi News Staff

November 21, 2007...TDI has been awarded a U.S. patent (7,279,047 B2, the latest of a series for the company) that covers production equipment for low-defect nitride semiconductor materials including bulk gallium nitride and aluminum gallium nitride (AlGaN) substrates. The patent, titled "Reactor for extended duration growth of gallium containing single crystals," relates to a crystal growth machine for fabricating GaN and AlGaN single crystal materials using a modified hydride vapor phase epitaxial (HVPE) process. According to TDI, its new production tool allows long lasting, high growth rate processes for high quality GaN and AlGaN single crystal materials.

"I am excited to see our intellectual property expanded by this new patent," says Vladimir Dmitriev, President and CEO of TDI. "This equipment will enable significant improvements in quality, stability and efficiency of crystal growth technology. It will be applied to fabrication of a variety of products including multi-wafer manufacturing of free-standing and bulk GaN substrates, particularly for Solid State Lighting applications. Fabrication of low-cost low-defect GaN substrates is the key for rapid penetration of Solid State Lighting in the Global lighting market." Company News Release

Kyma Reports Volume Production of AlN Template Substrates
CompoundSemi News Staff

November 19, 2007...Kyma Technologies, a supplier of high purity gallium nitride and aluminum nitride products, announced the recent volume shipment of 2-inch diameter c-plane AlN template substrates. Kyma’s AlN template substrates, which are sized up to 100 mm and have a highly oriented AlN deposited on sapphire or other substrates, help reduce cost of producing gallium nitride devices with a low dislocation density. The company points out that the c-axis preferred orientation of the AlN on the sapphire provides the ideal foundation for growing GaN thin films. Unlike other substrates, they do not have the added expense and complications associated with the buffering process that others require. Kyma's innovation also reduces the cost of using pure aluminum nitride substrates by at least an order of magnitude while giving the same performance as pure aluminum nitride substrates.

Dr. Ed Preble, Kyma's Chief Operating Officer said that the AlN substrate templates offer a low-cost method of acheiving achieving a dislocation density of 107 cm-2. He added, "The use of our AlN templates offers customers an attractive alternative to traditional two-temperature or direct nucleation schemes on sapphire, SiC or silicon substrates."

“Our AlN templates have been shown to present excellent starting surfaces for subsequent growth of GaN layers by metalorganic chemical vapor deposition (MOCVD) and also by hydride vapor phase epitaxy (HVPE),” commented Dr. Drew Hanser, Kyma’s Chief Technology Officer and VP Business Development. “We also have customers testing our AlN templates in molecular beam epitaxy (MBE) based processes and we are confident about the results.” Company News Release

RFMD Adds to Portfolio for Optimum Technology Matching Designers and Customers

November 19, 2007...RFMD has introduced several technologies that the company says will allow customers to have unprecedented levels of integration for their RF solutions. The company indicated that the newly introduced technologies include: wafer level packaging (WLP), micro-electro-mechanical-systems (MEMS), integrated conformal shielding, gallium nitride (GaN), GaAs E/D pHEMT, and GaAs BiFET.

RFMD designers leverage its proprietary method of Optimum Technology Matching that allows RFMD's designers to select the optimum technology for each application according to considerations of cost and performance. RFMD says its new technologies add to the already impressive portfolio of products that the designers can choose from for the Optimum Technology Matching. The company also expects that the new technology will expand growth prospects for its newly for its newly-formed Multi-Market Products Group. Company News Release

In other company news, RFMD reported that it has shipped its 100 millionth Polaris RF Solution to a leading handset manufacturer. At the same time the company says that orders for the third version of its Polaris RF solution, the Polaris 3, continue to grow. Company News Release

New Jersey Technology Council Honors Anadigics as Electronics Company of the Year for 2007

November 19, 2007...The New Jersey Technology Council has selected Anadigics as its 2007 Electronics Company of the Year. The Council named Anadigics this year's recipient based on the business strategy and market growth compared against other electronics companies throughout New Jersey. According to the Council, It also cited Anadigics for its leadership in the semiconductor electronics market and its continued promotion of third- and fourth- generation technology, specifically for the broadband wireless and wireline communication markets. New Jersey Technology Council News Release

Rubicon Announces IPO Price
CompoundSemi News Staff

November 19, 2007...Rubicon Technology of Franklin Park, Illinois USA, announced that the initial public offering of 6,700,000 shares of common stock would be at a price of $14 per share. Rubicon will sell 5,500,000 shares, and selling stockholders will sell 1,200,000 shares.The company also granted the underwriters an option to purchase up to an additional 1,005,000 shares of common stock to cover over-allotments, if any. Rubicon Technology's common stock will be listed on the NASDAQ Global Market under the trading symbol "RBCN." Company News Release

Skyworks Introduces FEMTO Cell Solutions Used at Samsung
CompoundSemi News Staff

November 14, 2007...Skyworks has announced that Samsung is using its transceivers, power amplifiers and LNAs in FEMTO cell applications. FEMTO cells are small cellular base stations that pick up a wireless signal in residential or small business environments and then amplify and rebroadcast the signal in broadband. The transceivers, power amplifiers, and LNAs provide a solution for FEMTO cell systems. According to In-Stat, the number of FEMTO cell subscriptions (installed devices) worldwide is expected to grow to 40 million by 2011 and surpass 100 million end-users over the next five years. “Skyworks is uniquely suited to support the demanding system requirements of FEMTO cells given our technology breadth and depth,” said Stan Swearingen, Skyworks’ vice president and general manager of Linear Products.

The FEMTO cell solution related products that are entering volume production at Skyworks include: The SKY74068 is a highly integrated transmitter for dual-band CDMA applications operating in cellular CDMA, AMPS, and PCS modes; The KY74092 is a highly integrated CDMA/PCS LNA for dual-band and tri-mode that provides low noise amplification with high linearity to achieve a high dynamic range; The SKY74100 is a highly integrated receiver for tri-band CDMA applications with GPS capability; SKY77410 is a load insensitive power amplifier (LIPA) module for WCDMA applications. Skyworks News Release

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Commentary & Perspective...

TDI Celebrates Ten Years of Pioneering GaN Technology
Jo Ann McDonald - Founding Editor

November 27, 2007...When Vladimir Dmitriev started Technology & Device International Inc. (www.tdii.com) ten years ago, few were in the bulk GaN game with an eye toward producing viable, commercial product. With his seemingly unorthodox method of growing GaN and AlGaN single crystal material, some didn't take TDI all that seriously. Fortunately, the USA government did and Vladimir's HVPE growth method has been funded by SBIR funding from agencies, like the Missile Defense Agency, ever since. Those of you who have a tendency to march to a different tune as a means of making their own pioneering contribution to the compounds might just learn something from Vladimir's success story.

Each year, for the last 10 years, I've received a lovely Christmas card from TDI and it always arrived as the first of many from business friends. This year, when I opened the envelope, it was a gracious greeting that proudly re-announced the company's 10th Anniversary that began in August, saying: "We'd like to thank you for helping make it possible. We hope our relationship with you will continue for many years to come. ...Sincerely, Technologies & Devices Intl." In all my 33 years as a technology journalist, I've never received such a classy thank you note and I'm sure others on TDI's holiday card list feel the same. This week's McDonald Report column is my public reply and my way of saying "You're welcome!" by sharing with readers my reminiscence of Vladimir and his wonderful group of superb international wide bandgap materials researchers and developers.

I first met Vladimir and his "students" in 1993 in Washington DC at one of the early ICSCRM conferences. That was the landmark meet put on by Howard University, which saw to it that for the first time, the conference would include three groups from Russia's famed Ioffee Institute. Prior to that, the Asian, Americans and European compound semi community knew very few Russians beyond a small handful of early immigrants, like Jacques Pankove and Michael Shur. The history of the Russian connection is well-documented, by the way, in our 2001 video workshop, called GaN 101, which features Jacques, Michael and Vladimir. There are actually a few copies of those tapes still kicking around that can be dusted off for CS industry history buffs.

Back then, the USA government, spearheaded by Max Yoder, saw to it that the Russians attended ICSCRM in '93 in DC, but due to limited funds they had to be housed at the less expensive Howard Inn near the University instead of at the classy hotel where the actual conference was held. As a struggling journalist on an equally limited budget, I too stayed at the "lesser" hotel. As a result, I had a great time getting to know the Russians. Vladimir's group was clearly the most outgoing... and obviously the most fun. As I helped them cope with their first trip to the USA, they reciprocated by inviting me to their informal hotel room party where suitcases were opened with all sorts of Russian vodka and goodies spilling out. That was just the first of such rowdy celebrations over the years with Vladimir's group. Those "kids" definitely know how to party... and dance, especially to good old USA rock 'n roll.

Max also saw to it that Vladimir's Ioffee Group had backing and support as Cree's then-fledging Eastern European Division. The goal was obviously to capture Russia's "Cold War" expertise, which turned out to be pretty much the same as what had been developed in Asia, Western Europe, and the USA. All that's simply colorful history now, but I thought you'd like to be reminded that wide bandgap expertise isn't anything new. It's been a long hard struggle to get to this point, and nobody struggled harder than our Russian colleagues to get to the leadership point where a company like TDI is today.

When Vladimir started TDI ten years ago, he did it with faith in his unique hydride vapor phase epitaxial growth process. VPE has been around for decades, and was especially favored by the Russians. But as demonstrated by TDI, the modified version appears tailor-made for GaN growth. Just days ago, the company announced it had been awarded a U.S. patent for their HVPE equipment. (Ref: our headline news, Nov. 21, 2007 that includes a description and link to the patent. According to TDI, their production tool allows long lasting, high growth rate processes for high quality GaN and AlGaN single crystal materials and brings with it the promise of lower cost, lower defect GaN substrates, which are especially sought after by the solid state lighting industry. As Vladimir was quoted as saying upon the issuance of the patent, "This equipment will enable significant improvements in quality, stability and efficiency of crystal growth technology. It will be applied to fabrication of a variety of products including multi-wafer manufacturing of free-standing and bulk GaN substrates..."

Technology aside, when I think of TDI I think most about the people. I have never seen a company of such united, warm hearted, genuine people. I've heard many Russian experiences over the years and retold many of their stories in various publications. TDI's and Vladimir's stands out, because he knew what he wanted to do and why he wanted to contribute. He stayed with his cause and as a result, he and his employees have thrived in the USA. Happy 10th Anniversary, TDI, and best wishes for the winter holidays. It has indeed been my personal pleasure helping publicize your progress and your successes, and we here at Compound Semi Online Inc. look forward to hearing about and sharing with our readers your continuing contributions to our field.

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